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| CEF09N6 Jul. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 6A ,RDS(ON)= 1.2 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole. D 6 G G D S TO-220F S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 30 5 15 5 50 0.38 -55 to 150 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 6-127 2.6 65 C/W C/W CEF09N6 ELECTRICAL CHARACTERISTICS (TC 25 C unless otherwise noted) Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=23.4mH RG=25 Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING 6 EAS IAS 500 9 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b VGS = 0V,ID = 250A VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250A VGS =10V, ID = 6A VGS = 10V, VDS = 10V VDS = 50V, ID = 6A VDD = 200V, ID = 9A, VGS = 10V RGEN=9.1 600 50 100 2 1.0 5 3 5 23 26 22 73 45 50 45 85 4 1.2 V A nA V A S ns ns ns ns nC nC nC ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 105 165 VDS =480V, ID = 9A, VGS =10V 6-128 6.0 45 CEF09N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 950 135 90 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ 6 DRAIN-SOURCE DIODE CHARACTERISTICS VSD VGS = 0V, Is =9A 1.5 V Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 12 VGS=10,9,8,7V 10 20 25 C ID, Drain Current(A) 8 6 4 ID, Drain Current (A) 15 -55 C 10 125 C 5 VGS=6V VGS=5V 2 0 0 2 4 6 8 10 12 0 0 1 2 3 4 5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 6-129 CEF09N6 1800 3.0 RDS(ON), Normalized Drain-Source On-Resistance VGS=10V 2.5 2.0 1.5 25 C 1.0 0.5 0 -55 C Tj=125 C 1500 C, Capacitance (pF) 1200 Ciss 900 600 300 0 0 Crss 5 10 15 20 25 6 Coss 0 5 10 15 20 25 VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A Figure 4. On-Resistance Variation with Drain Current and Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 12 Figure 6. Breakdown Voltage Variation with Temperature 20 gFS, Transconductance (S) 8 6 4 2 0 0 5 10 15 20 Is, Source-drain current (A) 10 VDS=50V 10 VGS=0V 1 0.1 0.4 0.8 1.2 1.6 2.0 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 6-130 Figure 8. Body Diode Forward Voltage Variation with Source Current CEF09N6 VGS, Gate to Source Voltage (V) 15 12 9 6 3 0 0 12 24 48 60 72 84 96 108 Qg, Total Gate Charge (nC) 100 D=0.01 VDS=480V ID=9A ID, Drain Current (A) 40 10 RD S (O L N) im it 10 10 1m s 0 s 10 m s ;1 D C 1 VGS=20V Tc=25 C Single Pulse 1 10 00 m s 0.1 6 100 500 1000 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.01 PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 1 10 100 1000 10000 0.1 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 6-131 |
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